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onsemi BSS123W

N-Channel MOSFET, Logic Level Enhancement Mode, 100V, 0.17A, 6

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Compliance

RoHS
Compliant

Dimensions

Height
1.1 mm

Physical

Case/Package
SOT-323
Mount
Surface Mount
Weight
30 mg

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
170 mA
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
1.39 Ω
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
71 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
200 mW
Rds On Max
6 Ω
Turn-Off Delay Time
8.4 ns
Turn-On Delay Time
2.94 ns

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