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onsemi BSR18A

Bipolar (BJT) Single Transistor, PNP, -40 V, 250 MHz, 350 mW, -200 mA, 30

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
930 µm
Length
2.92 mm
Width
1.3 mm

Physical

Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
Obsolete

Technical

Collector Base Voltage (VCBO)
-40 V
Collector Emitter Breakdown Voltage
-40 V
Collector Emitter Saturation Voltage
-400 mV
Collector Emitter Voltage (VCEO)
-40 V
Current Rating
-200 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-35 V
Frequency
-5 V
Gain Bandwidth Product
250 MHz
hFE Min
1.2 mm
Max Breakdown Voltage
40 V
Max Collector Current
-200 mA
Max Frequency
250 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
350 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
350 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
-40 V

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