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onsemi BSR16

Bipolar (BJT) Transistor PNP 60 V 800 mA 200MHz 350 mW Surface Mount SOT-23-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.2 mm
Length
2.92 mm
Width
1.3 mm

Physical

Case/Package
SOT-23-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
30 mg

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
-60 V
Collector Emitter Breakdown Voltage
-60 V
Collector Emitter Saturation Voltage
-1.6 V
Collector Emitter Voltage (VCEO)
-60 V
Current Rating
-800 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
200 MHz
Gain Bandwidth Product
200 MHz
hFE Min
100
Max Breakdown Voltage
60 V
Max Collector Current
-800 mA
Max Frequency
200 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
350 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
350 mW
Termination
SMD/SMT
Transition Frequency
200 MHz
Voltage Rating (DC)
-60 V

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