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onsemi BD809G

Bipolar (BJT) Transistor NPN 80 V 10 A 1.5MHz 90 W Through Hole TO-220AB

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
15.75 mm
Length
10.28 mm
Width
4.82 mm

Physical

Case/Package
TO-220-3
Contact Plating
Tin
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
Obsolete

Technical

Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
1.1 V
Collector Emitter Voltage (VCEO)
80 V
Current Rating
10:00 AM
Element Configuration
10 A
Emitter Base Voltage (VEBO)
5 V
Frequency
1.5 MHz
Gain Bandwidth Product
1.5 MHz
hFE Min
30
Max Breakdown Voltage
80 V
Max Collector Current
10 A
Max Frequency
1 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
90 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
90 W
Transition Frequency
1.5 MHz
Voltage Rating (DC)
80 V

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