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onsemi BD679AS

NPN 40 W 80 V 4 A Through Hole Epitaxial Silicon Transistor - TO-126

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Case/Package
TO-126
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
2.8 V
Collector Emitter Voltage (VCEO)
80 V
Continuous Collector Current
4:00 AM
Current
4 A
Current Rating
2 A
Element Configuration
4 A
Emitter Base Voltage (VEBO)
5 V
hFE Min
750
Max Collector Current
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
40 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
40 W
Voltage
80 V
Voltage Rating (DC)
80 V

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