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onsemi BCW65ALT1G

Bipolar (BJT) Transistor NPN 32 V 800 mA 100MHz 225 mW Surface Mount SOT-23-3 (TO-236)

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.11 mm
Length
3.04 mm
Width
2.64 mm

Physical

Case/Package
SOT-23
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
32 V
Collector Emitter Saturation Voltage
700 mV
Collector Emitter Voltage (VCEO)
32 V
Current Rating
800 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
35
Max Breakdown Voltage
32 V
Max Collector Current
800 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
225 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
32 V

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