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onsemi BCP56T1G

ON Semi BCP56T1G NPN Bipolar Transistor, 1 A, 80 V SOT-223 ON Semiconductor BCP56T1G

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.57 mm
Length
6.5 mm
Width
3.5 mm

Physical

Case/Package
SOT-223-4
Contact Plating
Tin
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
80 V
Current Rating
1:00 AM
Element Configuration
1 A
Emitter Base Voltage (VEBO)
5 V
Frequency
130 MHz
Gain Bandwidth Product
130 MHz
hFE Min
1.75 mm
Max Breakdown Voltage
80 V
Max Collector Current
1 A
Max Frequency
130 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.5 W
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
1.5 W
Transition Frequency
130 MHz
Voltage Rating (DC)
80 V

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