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onsemi BC856BDW1T1G

Bipolar Transistors - BJT PNP Transistor General Purpose

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
900 µm
Length
2 mm
Width
1.25 mm

Physical

Case/Package
SOT-363-6
Contact Plating
Tin
Number of Pins
6

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
-650 mV
Collector Emitter Voltage (VCEO)
65 V
Current Rating
-100 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
220
Max Breakdown Voltage
65 V
Max Collector Current
100 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
380 mW
Min Operating Temperature
-55 °C
Number of Elements
2
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
380 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
-65 V

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