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onsemi BC848CLT1G

Transistor: NPN; bipolar; 30V; 0.1A; 225mW; -55+150 deg.C; SMD; SOT23

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
940 µm
Length
2.9 mm
Width
IBS

Physical

Case/Package
SOT-23-3
Contact Plating
Tin
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
30 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
600 mV
Collector Emitter Voltage (VCEO)
30 V
Current Rating
100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
100 MHz
Gain Bandwidth Product
100 MHz
hFE Min
940 µm
Max Breakdown Voltage
30 V
Max Collector Current
100 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
300 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
30 V

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