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onsemi BC846CLT1G

100 mA, 65 V NPN General Purpose Bipolar Junction Transistor

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Dimensions

Height
1.11 mm

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Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
600 mV
Collector Emitter Voltage (VCEO)
65 V
Emitter Base Voltage (VEBO)
6 V
Gain Bandwidth Product
100 MHz
hFE Min
420
Max Collector Current
100 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
225 mW

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