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onsemi 50A02MH-TL-E

Bipolar Transistor, -50V, -0.5A, Low VCE(sat), PNP Single MCPH3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
850 µm
Length
2 mm
Width
2.1 mm

Physical

Case/Package
SMD/SMT
Contact Plating
Tin
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
-50 V
Collector Emitter Breakdown Voltage
-50 V
Collector Emitter Saturation Voltage
-60 mV
Collector Emitter Voltage (VCEO)
-50 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Gain Bandwidth Product
690 MHz
hFE Min
900 µm
Max Breakdown Voltage
50 V
Max Collector Current
-500 mA
Max Frequency
690 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
600 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Digi-Reel®
Polarity
Tape and Reel
Power Dissipation
600 mW
Transition Frequency
690 MHz

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