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onsemi 30C02MH-TL-E

Bipolar (BJT) Transistor NPN 30 V 700 mA 540MHz 600 mW Surface Mount 3-MCPH

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Compliance

Lead Free
Lead Free
RoHS
Compliant

Dimensions

Height
850 µm
Length
2 mm
Width
1.6 mm

Physical

Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
40 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
190 mV
Collector Emitter Voltage (VCEO)
190 mV
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
hFE Min
850 µm
Max Collector Current
700 mA
Max Frequency
540 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
600 mW
Min Operating Temperature
-55 °C
Packaging
Tape & Reel (TR)
Polarity
Tape and Reel
Transition Frequency
540 MHz

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