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onsemi 2SK3747

Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

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Compliance

Lead Free
Lead Free
RoHS
10 Ω

Physical

Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Technical

Continuous Drain Current (ID)
2:00 AM
Drain to Source Breakdown Voltage
2 A
Drain to Source Resistance
13 Ω
Drain to Source Voltage (Vdss)
13 Ω
Element Configuration
Single
Fall Time
59 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
380 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
3 W
Rds On Max
13 Ω
Resistance
10 Ω
Rise Time
13 Ω
Threshold Voltage
3.5 V
Turn-Off Delay Time
37 ns
Turn-On Delay Time
Compliant

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