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onsemi 2SK3666-2-TB-E

2SK3666-2-TB-E N-channel JFET Transistor; 30 V; Idss 0.6 to 1.5mA; 3-Pin SOT-23

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Compliance

Lead Free
Lead Free
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
2.9 mm
Width
1.5 mm

Physical

Case/Package
TO-236-3
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
10 mA
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
200 Ω
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
-30 V
Input Capacitance
4 pF
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-55 °C
Packaging
Tape and Reel
Power Dissipation
200 mW

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