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onsemi 2SC5242OTU

Bipolar (BJT) Transistor NPN 250V 17A 30MHz 130W Through Hole TO-3P

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
23.8 mm

Physical

Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
6.401 g

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
250 V
Collector Emitter Breakdown Voltage
250 V
Collector Emitter Saturation Voltage
400 mV
Collector Emitter Voltage (VCEO)
250 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
30 MHz
Gain Bandwidth Product
30 MHz
hFE Min
55
Max Collector Current
17 A
Max Frequency
30 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
130 W
Min Operating Temperature
-50 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
130 W
Transition Frequency
30 MHz

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