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onsemi 2SC3647S-TD-E

Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.5 mm
Length
4.5 mm
Width
2.5 mm

Physical

Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
120 V
Collector Emitter Breakdown Voltage
100 V
Collector Emitter Saturation Voltage
130 mV
Collector Emitter Voltage (VCEO)
100 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Gain Bandwidth Product
120 MHz
Max Breakdown Voltage
100 V
Max Collector Current
2 A
Max Frequency
1 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-55 °C
Packaging
Tape and Reel
Polarity
NPN
Transition Frequency
120 MHz

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