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onsemi 2SA2013-TD-E

Bipolar Transistor, -50V, -4A, Low VCE(sat), (PNP)NPN Single PCP

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.5 mm
Length
4.5 mm
Width
2.5 mm

Physical

Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
-50 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
-200 mV
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-6 V
Gain Bandwidth Product
360 MHz
hFE Min
200
Max Breakdown Voltage
50 V
Max Collector Current
4 A
Max Frequency
360 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
1.3 W
Min Operating Temperature
-55 °C
Packaging
Tape and Reel
Polarity
PNP
Transition Frequency
400 MHz

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