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onsemi 2SA1962RTU

Power Bipolar Transistor, 17A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Contact Plating
Tin
Mount
Through Hole
Weight
6.401 g

Supply Chain

Lifecycle Status
EOL

Technical

Collector Base Voltage (VCBO)
-250 V
Collector Emitter Breakdown Voltage
250 V
Collector Emitter Voltage (VCEO)
250 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
30 MHz
Gain Bandwidth Product
30 MHz
hFE Min
55
Max Collector Current
17 A
Max Frequency
30 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
130 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
130 W
Transition Frequency
30 MHz

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