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onsemi 2N7002WT1G

2N7002WT1G N-channel MOSFET Transistor; 0.34 A; 60 V; 3-Pin SC-70

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1 mm
Length
2.2 mm
Width
1.35 mm

Physical

Case/Package
SOT-323
Contact Plating
Tin
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
115 mA
Drain to Source Breakdown Voltage
78 V
Drain to Source Resistance
1.6 Ω
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
9 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
24.5 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
330 mW
Min Operating Temperature
-55 °C
Nominal Vgs
1 V
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
200 mW
Rds On Max
1.6 Ω
Resistance
1.6 Ω
Rise Time
9 ns
Threshold Voltage
1 V
Turn-Off Delay Time
12.5 ns
Turn-On Delay Time
5.85 ns

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