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onsemi 2N7002ET1G

2N7002ET1G N-channel MOSFET Transistor, 0.26 A, 60 V, 3-Pin SOT-23

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.11 mm
Length
2.9 mm
Width
1.3 mm

Physical

Case/Package
SOT-23-3
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
260 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
860 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
1.2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
26.7 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-55 °C
Nominal Vgs
1 V
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
300 mW
Rds On Max
2.5 Ω
Resistance
2.5 Ω
Rise Time
1.2 ns
Threshold Voltage
1 V
Turn-Off Delay Time
4.8 ns
Turn-On Delay Time
1.7 ns

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