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onsemi 2N7000-D26Z

2N7000 Series 60 V 200 mA N-Ch. Enhancement Mode Field Effect Transistor-TO-92-3

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Compliance

RoHS
Compliant

Dimensions

Height
8.77 mm

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
200 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
1.2 Ω
Drain to Source Voltage (Vdss)
60 V
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
400 mW
Turn-Off Delay Time
10 ns
Turn-On Delay Time
10 ns

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