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onsemi 2N6517TA

Small Signal Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
8.77 mm
Length
4.58 mm
Width
3.86 mm

Physical

Case/Package
TO-92
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
240 mg

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
350 V
Collector Emitter Breakdown Voltage
350 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
350 V
Current Rating
500 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
200 MHz
Gain Bandwidth Product
40 MHz
hFE Min
20
Max Breakdown Voltage
350 V
Max Collector Current
500 mA
Max Frequency
200 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
625 mW
Transition Frequency
200 MHz
Voltage Rating (DC)
350 V

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