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onsemi 2N6491G

Transistor, Bipolar; Si; PNP; Power; VCEO 80VDC; IC 15A; PD 75W; TO-220AB; VCBO 90VDC

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
15.75 mm
Length
10.28 mm
Width
4.82 mm

Physical

Case/Package
TO-220-3
Contact Plating
Tin
Number of Pins
3
Weight
4.535924 g

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
90 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
3.5 V
Collector Emitter Voltage (VCEO)
80 V
Current Rating
15 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
5 MHz
Gain Bandwidth Product
5 MHz
hFE Min
20
Max Collector Current
15 A
Max Frequency
5 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
1.8 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
1.8 W
Transition Frequency
5 MHz
Voltage Rating (DC)
-80 V

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