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onsemi 2N6109G

Bipolar junction transistor, PNP, -7 A, -50 V, THT, TO-220, 2N6109G

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
15.75 mm
Length
10.28 mm
Width
4.82 mm

Physical

Case/Package
TO-220-3
Contact Plating
Tin
Number of Pins
3
Weight
4.535924 g

Supply Chain

Lifecycle Status
EOL

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
3.5 V
Collector Emitter Voltage (VCEO)
50 V
Current Rating
7 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
10 MHz
Gain Bandwidth Product
10 MHz
hFE Min
30
Max Collector Current
7 A
Max Frequency
10 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
40 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
40 W
Transition Frequency
10 MHz
Voltage Rating (DC)
-50 V

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