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onsemi 2N5886G

Transistor, Bipolar, Si, NPN, High Power, VCEO 80VDC, IC 25A, PD 200W, TO-204AA (TO-3)

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
8.51 mm
Length
39.37 mm
Width
26.67 mm

Physical

Case/Package
TO-204-3
Contact Plating
Tin
Number of Pins
2
Weight
IBS

Supply Chain

Lifecycle Status
EOL

Technical

Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
80 V
Current Rating
25 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
4 MHz
Gain Bandwidth Product
4 MHz
hFE Min
20
Max Collector Current
25 A
Max Frequency
4 MHz
Max Operating Temperature
200 °C
Max Power Dissipation
200 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
200 W
Transition Frequency
4 MHz
Voltage Rating (DC)
80 V

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