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onsemi 2N5551G

Transistor, Bipolar, Si, NPN, Amplifier, VCEO 160VDC, IC 600mA, PD 1.5W, TO-92, hFE 30

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
5.33 mm
Length
5.2 mm
Width
4.19 mm

Physical

Case/Package
TO-92
Contact Plating
Copper, Silver, Tin
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
Obsolete

Technical

Collector Base Voltage (VCBO)
180 V
Collector Emitter Breakdown Voltage
160 V
Collector Emitter Saturation Voltage
250 mV
Collector Emitter Voltage (VCEO)
160 V
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
80
Max Collector Current
600 mA
Max Frequency
300 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
625 mW
Transition Frequency
300 MHz
Voltage Rating (DC)
160 V

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