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onsemi 2N5401YTA

Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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Compliance

Lead Free
Lead Free
RoHS
Compliant

Dimensions

Height
8.77 mm

Physical

Case/Package
TO-92
Mount
Through Hole
Number of Pins
3
Weight
240 mg

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
-160 V
Collector Emitter Breakdown Voltage
-150 V
Collector Emitter Saturation Voltage
-200 mV
Collector Emitter Voltage (VCEO)
-150 V
Current Rating
-600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
400 MHz
Gain Bandwidth Product
400 MHz
hFE Min
60
Max Collector Current
-600 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
625 mW
Transition Frequency
400 MHz
Voltage Rating (DC)
-160 V

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