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onsemi 2N5088G

Bulk Through Hole NPN Single Bipolar (BJT) Transistor 300 @ 100muA 5V 50nA ICBO 625mW 50MHz

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
5.33 mm
Length
19.05 mm
Width
6.35 mm

Physical

Case/Package
TO-92
Number of Pins
3
Weight
4.535924 g

Supply Chain

Lifecycle Status
Obsolete

Technical

Collector Base Voltage (VCBO)
35 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
30 V
Current Rating
50 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
4.5 V
Frequency
50 MHz
Gain Bandwidth Product
50 MHz
hFE Min
300
Max Collector Current
100 mA
Max Frequency
50 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
625 mW
Transition Frequency
50 MHz
Voltage Rating (DC)
30 V

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