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onsemi 2N3906TAR

Bipolar (BJT) Transistor PNP 250MHz Through Hole TO-92-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
8.77 mm
Length
5.2 mm
Width
4.19 mm

Physical

Case/Package
TO-92-3
Mount
Through Hole
Number of Pins
3
Weight
240 mg

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
-40 V
Collector Emitter Breakdown Voltage
-40 V
Collector Emitter Saturation Voltage
-400 mV
Collector Emitter Voltage (VCEO)
-40 V
Current Rating
-200 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
-5 V
Frequency
250 MHz
Gain Bandwidth Product
250 MHz
hFE Min
100
Max Breakdown Voltage
40 V
Max Collector Current
-200 mA
Max Frequency
250 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
625 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
-40 V

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