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onsemi 2N3906

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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Compliance

RoHS
Compliant

Dimensions

Height
10.41 mm

Physical

Case/Package
TO-92
Mount
Through Hole
Number of Pins
3

Supply Chain

Lifecycle Status
Obsolete

Technical

Collector Base Voltage (VCBO)
40 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
400 mV
Collector Emitter Voltage (VCEO)
40 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
250 MHz
Gain Bandwidth Product
250 MHz
hFE Min
60
Max Collector Current
200 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
625 mW

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