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onsemi 2N3904TAR

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
5.33 mm
Length
5.2 mm
Width
4.19 mm

Physical

Case/Package
TO-92-3
Mount
Through Hole
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
650 mV
Current Rating
200 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
100
Max Breakdown Voltage
40 V
Max Collector Current
200 mA
Max Frequency
300 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
625 mW
Transition Frequency
300 MHz
Voltage Rating (DC)
40 V

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