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NXP Semiconductors BFU725F/N1

NPN wideband silicon germanium RF transistor

产品详情

Compliance

RoHS
Compliant

Dimensions

Height
1 mm
Length
2.2 mm
Width
1.35 mm

Physical

Mount
Surface Mount
Number of Pins
4

Technical

Collector Base Voltage (VCBO)
10 V
Collector Emitter Voltage (VCEO)
2.8 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
1 V
Max Collector Current
40 mA
Max Frequency
12 GHz
Max Operating Temperature
150 °C
Max Power Dissipation
136 mW

合规性文件

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