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NXP Semiconductors BFU710F,115

Trans RF BJT NPN 2.8V 0.01A 136mW 4-Pin(3+Tab) DFP T/R

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
SOT-343
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
4

Technical

Collector Base Voltage (VCBO)
10 V
Collector Emitter Breakdown Voltage
2.8 V
Collector Emitter Voltage (VCEO)
2.8 V
Continuous Collector Current
10 mA
Emitter Base Voltage (VEBO)
1 V
Frequency
110 GHz
Gain
14 dB
hFE Min
200
Max Breakdown Voltage
2.8 V
Max Collector Current
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
-65 °C
Min Operating Temperature
-65 °C
Number of Elements
1
Output Power
136 mW
Packaging
Digi-Reel®
Polarity
NPN
Power Dissipation
136 mW
Transition Frequency
43 GHz

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