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NXP Semiconductors BFU690F,115

BFU690F Series NPN 230 mW 5.5 V 100 mA Wideband Silicon RF Transistor-SOT-343F

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
750 µm

Physical

Mount
Surface Mount
Number of Pins
4

Technical

Collector Base Voltage (VCBO)
16 V
Collector Emitter Breakdown Voltage
5.5 V
Collector Emitter Voltage (VCEO)
5.5 V
Continuous Collector Current
70 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
2.5 V
Frequency
18 GHz
Gain
18.5 dB
Gain Bandwidth Product
18 GHz
hFE Min
90
Max Breakdown Voltage
5.5 V
Max Collector Current
100 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
230 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Output Power
230 mW
Packaging
Digi-Reel®
Polarity
NPN
Power Dissipation
490 mW
Transition Frequency
18 GHz

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