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NXP Semiconductors BFU590GX
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Compliance
RoHS
Compliant
Dimensions
Height
1.8 mm
Physical
Case/Package
TO-261-4
Contact Plating
Tin
Mount
Surface Mount
Technical
Collector Base Voltage (VCBO)
24 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
12 V
Continuous Collector Current
80 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
2 V
Frequency
900 MHz
Gain
8 dB
Gain Bandwidth Product
8.5 GHz
hFE Min
60
Max Breakdown Voltage
12 V
Max Collector Current
200 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-40 °C
Number of Elements
1
Packaging
Digi-Reel®
Polarity
NPN
Power Dissipation
2 W
Transition Frequency
8.5 GHz