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NXP Semiconductors BFU550XAR

RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB

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Compliance

Lead Free
Lead Free
RoHS
Compliant

Physical

Case/Package
TO-253-4
Contact Plating
Tin
Mount
Surface Mount

Technical

Collector Base Voltage (VCBO)
24 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
16 V
Continuous Collector Current
15 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
2 V
Frequency
900 MHz
Gain
21.5 dB
Gain Bandwidth Product
11 GHz
hFE Min
60
Max Breakdown Voltage
12 V
Max Collector Current
50 mA
Max Operating Temperature
150 °C
Max Power Dissipation
450 mW
Min Operating Temperature
-40 °C
Packaging
Tape & Reel (TR)
Polarity
NPN
Transition Frequency
11 GHz

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