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NXP Semiconductors BFU530AR

BFU530A: 12 V 40 mA 450 mW NPN Wideband Silicon RF Transistor-TO-236AB (SOT23)

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Compliance

Lead Free
Lead Free
RoHS
Compliant

Physical

Case/Package
TO-236-3
Contact Plating
Tin
Mount
Surface Mount
Weight
8.788352 mg

Technical

Collector Base Voltage (VCBO)
24 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
16 V
Continuous Collector Current
10 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
2 V
Frequency
900 MHz
Gain
18 dB
Gain Bandwidth Product
11 GHz
hFE Min
60
Max Breakdown Voltage
12 V
Max Collector Current
40 mA
Max Operating Temperature
150 °C
Max Power Dissipation
450 mW
Min Operating Temperature
-40 °C
Packaging
Tape & Reel (TR)
Polarity
NPN
Transition Frequency
11 GHz

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