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NXP Semiconductors BFU520WX

RF Transistor, NPN, 2 GHz, Max. Gain in dB is 18.5 @ 900 MHz, 3 pin SOT323, Silicon

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Compliance

Lead Free
Lead Free
RoHS
Compliant

Physical

Case/Package
SOT-323-3
Contact Plating
Tin
Mount
Surface Mount

Technical

Collector Base Voltage (VCBO)
24 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
16 V
Continuous Collector Current
5 mA
Element Configuration
Dual
Emitter Base Voltage (VEBO)
2 V
Frequency
900 MHz
Gain
18.5 dB
Gain Bandwidth Product
10 GHz
hFE Min
60
Max Breakdown Voltage
12 V
Max Collector Current
30 mA
Max Operating Temperature
150 °C
Max Power Dissipation
450 mW
Min Operating Temperature
-40 °C
Packaging
Tape & Reel (TR)
Polarity
NPN
Transition Frequency
10 GHz

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