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NXP Semiconductors BFU520WF

RF Bipolar Transistors NPN wideband silicon RF transistor

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Compliance

RoHS
Compliant

Physical

Case/Package
SOT-323
Contact Plating
Tin
Mount
-40 °C

Technical

Collector Base Voltage (VCBO)
24 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
12 V
Emitter Base Voltage (VEBO)
2 V
Gain
13 dB
Max Collector Current
30 mA
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-40 °C
Packaging
Tape & Reel (TR)
Polarity
NPN
Transition Frequency
10 GHz

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