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NXP Semiconductors BFT93,215

BFT93 Series 12 V 300 mW 5 GHz SMT PNP Wideband Transistor - SOT-23-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1 mm
Length
3 mm
Width
1.4 mm

Physical

Case/Package
TO-236-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
200.998119 mg

Technical

Collector Base Voltage (VCBO)
15 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Voltage (VCEO)
12 V
Continuous Collector Current
-35 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
2 V
Frequency
5 GHz
Gain
16.5 dB
Gain Bandwidth Product
5 GHz
hFE Min
50
Max Breakdown Voltage
12 V
Max Collector Current
35 mA
Max Operating Temperature
175 °C
Max Power Dissipation
300 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Output Power
300 mW
Packaging
Cut Tape (CT)
Polarity
PNP
Power Dissipation
300 mW
Transition Frequency
5 GHz

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