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NXP Semiconductors BFT92W,115

RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, L Band, Silicon, PNP

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Compliance

RoHS
Compliant

Dimensions

Height
1.1 mm

Physical

Number of Pins
3

Technical

Collector Base Voltage (VCBO)
-20 V
Collector Emitter Voltage (VCEO)
-15 V
Emitter Base Voltage (VEBO)
-2 V
Gain Bandwidth Product
4 GHz
hFE Min
20
Max Collector Current
-35 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Number of Elements
1
Packaging
Digi-Reel®
Polarity
Digi-Reel®
Power Dissipation
300 mW

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