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NXP Semiconductors BFG35,115

BFG35 Series 18 V 1 W 4 GHz SMT NPN Wideband Transistor - SOT-223

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.7 mm
Length
6.7 mm
Width
3.7 mm

Physical

Case/Package
SC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
4
Weight
188.014037 mg

Technical

Collector Base Voltage (VCBO)
25 V
Collector Emitter Breakdown Voltage
18 V
Collector Emitter Voltage (VCEO)
18 V
Continuous Collector Current
150 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
2 V
Frequency
4 GHz
Gain
15 dB
Gain Bandwidth Product
4 GHz
Max Breakdown Voltage
18 V
Max Collector Current
150 mA
Max Frequency
4 GHz
Max Operating Temperature
175 °C
Max Power Dissipation
1 W
Min Operating Temperature
-65 °C
Number of Elements
1
Output Power
1 W
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
1 W
Transition Frequency
4 GHz

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