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NXP Semiconductors BF1107

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET

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Compliance

RoHS
Compliant

Dimensions

Height
1 mm
Length
3 mm
Width
1.4 mm

Physical

Mount
Surface Mount
Number of Pins
3

Technical

Continuous Drain Current (ID)
10 mA
Drain to Source Resistance
20 Ω
Element Configuration
Single
Gate to Source Voltage (Vgs)
7 V
Max Operating Temperature
150 °C
Min Operating Temperature
-65 °C

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