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NXP Semiconductors BCW33.

Bipolar (Bjt) Single Transistor, General Purpose, Npn, 32 V, 250 Mw, 100 Ma, 600

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Compliance

REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1 mm
Length
3 mm
Width
1.4 mm

Physical

Case/Package
SOT-23
Mount
-65 °C
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
32 V
Collector Emitter Breakdown Voltage
32 V
Collector Emitter Saturation Voltage
250 mV
Collector Emitter Voltage (VCEO)
32 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Max Collector Current
200 mA
Max Frequency
100 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-65 °C
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
250 mW

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