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NXP Semiconductors BC80725215

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB

产品详情

Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1 mm
Length
3 mm
Width
1.4 mm

Physical

Case/Package
SOT-23-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
4.535924 g

Technical

Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
700 mV
Collector Emitter Voltage (VCEO)
45 V
Current
8 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
80 MHz
Gain Bandwidth Product
80 MHz
Max Breakdown Voltage
45 V
Max Collector Current
500 mA
Max Frequency
80 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
250 mW
Transition Frequency
80 MHz
Voltage
45 V

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