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NXP Semiconductors BAS16J115

100V +150@(Tj) 200mW Single 1.25V@150mA 4ns 500nA@80V 250mA SOD-323F Switching Diode ROHS

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Compliance

Lead Free
Lead Free
Radiation Hardening
550 mW
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Case/Package
SC
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
2

Technical

Average Rectified Current
250 mA
Element Configuration
Single
Forward Current
250 mA
Forward Voltage
1.25 V
Max Forward Surge Current (Ifsm)
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
550 mW
Max Repetitive Reverse Voltage (Vrrm)
100 V
Max Reverse Leakage Current
500 nA
Max Reverse Voltage (DC)
100 V
Max Surge Current
3.3 A
Min Operating Temperature
-65 °C
Peak Non-Repetitive Surge Current
4 A
Power Dissipation
4:00 AM
Recovery Time
4 ns
Reverse Recovery Time
4 ns

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