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NXP Semiconductors AFT27S006NT1

RF Power Transistor, 0.10 to 3.6 GHz, 6 W, Typ Gain in dB is 22.5 @ 2170 MHz, 28 V, LDMOS, SOT1811-2

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Compliance

Lead Free
Lead Free
RoHS
Compliant

Physical

Contact Plating
Tin
Mount
-40 °C
Number of Pins
3

Technical

Current Rating
10 µA
Frequency
10 µA
Gain
22 dB
Gate to Source Voltage (Vgs)
10 V
Max Frequency
3.6 GHz
Max Operating Temperature
225 °C
Min Operating Temperature
225 °C
Number of Elements
1
Packaging
Cut Tape (CT)
Test Current
70 mA
Test Voltage
28 V
Voltage Rating
65 V

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