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NXP Semiconductors AFT09S282NR3

RF Power Transistor, 720 to 960 MHz, 280 W, Typ Gain in dB is 20 @ 960 MHz, 28 V, LDMOS, SOT1823

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Contact Plating
Tin
Mount
-40 °C
Number of Pins
3
Weight
IBS

Technical

Frequency
960 MHz
Gain
20 dB
Gate to Source Voltage (Vgs)
10 V
Max Frequency
960 MHz
Max Operating Temperature
225 °C
Min Operating Temperature
225 °C
Number of Elements
1
Output Power
80 W
Test Current
1.4 A
Test Voltage
28 V
Voltage Rating
70 V

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