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NXP Semiconductors AFT05MS031NR1

RF Power Transistor, 0.0018 to 0.52 GHz, 31 W, 17.7 dB, 13.6 V, SOT1732, LDMOS

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Physical

Case/Package
TO-270-2
Contact Plating
Tin
Mount
-40 °C
Number of Pins
2
Weight
IBS

Technical

Drain to Source Breakdown Voltage
40 V
Drain to Source Voltage (Vdss)
40 V
Element Configuration
Single
Frequency
520 MHz
Gain
17.7 dB
Gate to Source Voltage (Vgs)
12 V
Max Frequency
520 MHz
Max Operating Temperature
225 °C
Max Power Dissipation
225 °C
Min Operating Temperature
-40 °C
Number of Elements
1
Output Power
31 W
Power Dissipation
294 W
Test Current
10 mA
Test Voltage
13.6 V
Voltage Rating
40 V

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