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NXP Semiconductors AFM907NT1

Wideband Airfast RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V, HVSON16, RoHS

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Compliance

RoHS
Non-Compliant

Dimensions

Height
1 mm

Technical

Drain to Source Voltage (Vdss)
30 V
Gate to Source Voltage (Vgs)
12 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
Number of Channels
1
Power Dissipation
65.7 W

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